| PART |
Description |
Maker |
| NX8369TB |
LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
California Eastern Labs
|
| NX8346TS |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION
|
NEC
|
| NX6311EH NX6311EH-AZ |
1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION
|
California Eastern Labs
|
| IRKC61/20 IRKC61-20 IRKD270-22-NPBF IRKD270-24NPBF |
60 A, 2000 V, SILICON, RECTIFIER DIODE
270 A, 2200 V, SILICON, RECTIFIER DIODE
270 A, 2400 V, SILICON, RECTIFIER DIODE
DIODE 320 A, 600 V, SILICON, RECTIFIER DIODE, POWER, MAGN-A-PAK-3, Rectifier Diode
|
VISHAY SEMICONDUCTORS
|
| NX7663JB-BC |
LASER DIODE InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 625 nm OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6410GH |
LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR 2.5 Gb/s FTTH PON APPLICATION
|
Renesas Electronics Corporation
|
| NX7437 |
LASER DIODE 1 490 nm InGaAsP MQW-FP LASER DIODE COAXIAL MODULE FOR OTDR APPLICATION
|
Renesas Electronics Corporation
|
| NX6510GH |
LASER DIODE 1 550 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND OC-48 IR-2
|
Renesas Electronics Corporation
|
| SLD324ZT-21 SLD324ZT |
High-Power Density 2W Laser Diode
798 nm, LASER DIODE M-272, 12 PIN
|
SONY
NXP Semiconductors N.V.
|
| SLD105UL |
Low Power GaAIAs Laser Diode(低功耗镓铝砷激光二极管)
GaAlAs Laser Diode
|
SONY[Sony Corporation]
|
| DL-3148-033 |
Red Laser Diode Index Guided AlGaInP Laser Diode
|
Sanyo Semiconductor
|
| DL-3147-261 DL-3147-161 |
Red Laser Diode Index Guided AlGaInP Laser Diode
70
|
Sanyo Semiconductor
|
